On Epitaxy of Ultrathin Ni1-xPtx Silicide Films on Si(001)

Epitaxial Ni(Pt)Si2-y (y<1) films readily grow upon thermal treatment of 2-nm thick Ni and Ni0.96Pt0.04 films deposited on Si(001). For annealing at 500 o C, the films are 5.4-5.6 nm thick with 61-70 μΩcm in resistivity. At 750 o C, the epitaxial Ni(Pt)Si2-y films become 6.1-6.2 nm thick with a resistivity of 42-44 μΩcm. Structural analysis reveals twins, facet wedges, and thickness inhomogeities in the films grown at 500 o C. For the higher temperature, an almost defect-free NiSi2-y film with flat and sharp interface is formed. The presence of Pt makes the aforementioned imperfections more persistent. E-mail addresses: [email protected]; [email protected]